Recently, Professor Zhang Xianmin’s research group at the School of Materials Science and Engineering, NEU, achieved new progress in the field of design and regulation of room-temperature topological ferrimagnetic semiconductors. The related findings were published in the international academic journal Advanced Functional Materials under the title “Room-Temperature 2D Topological Ferrimagnetic Semiconductors with Multiple Electronic Phase Transitions”. Doctoral student Deng Li is the first author of the paper, his advisor Professor Zhang Xianmin is the corresponding author, and NEU serves as the sole corresponding-author affiliation. This relevant work provides new insights for the design of atomic-thickness topological ferrimagnetic materials and the development of electronic devices.

Topological ferrimagnetic FeNbX₂ (X = Se/Te) semiconductors and electronic phase transition regulation